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SI7252DP-T1-GE3 IC Chip.MCU MOSFET

    Dual N-Channel 100 V (D-S) MOSFET
    FEATURES
    • TrenchFET® power MOSFET
    • 100 % R g and UIS tested
    • Material categorization:
    for definitions of compliance please see
    www.vishay.com/doc?99912
    APPLICATIONS
    • Primary side switching
    • Synchronous rectification
    • DC/AC inverters
    Notes
    a. based on TC = 25 °C
    b. Surface mounted on 1" x 1" FR4 board
    c. t = 10 s
    d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
    (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
    and is not required to ensure adequate bottom side solder interconnection
    e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components
    f. Maximum under steady state conditions is 85 °C/W
    PRODUCT SUMMARY
    VDS (V) 100
    RDS(on) max. () at VGS Dual N-Channel 100 V (D-S) MOSFET
    FEATURES
    • TrenchFET power MOSFET
    • 100 % R g and UIS tested
    • Material categorization:
    for definitions of compliance please see
    www.vishay.com/doc?99912
    APPLICATIONS
    • Primary side switching
    • Synchronous rectification
    • DC/AC inverters
    Notes
    a. based on TC = 25 °C
    b. Surface mounted on 1" x 1" FR4 board
    c. t = 10 s
    d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
    (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
    and is not required to ensure adequate bottom side solder interconnection
    e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components
    f. Maximum under steady state conditions is 85 °C/W
    RDS(on) max. () at VGS = 7.5 V 0.019
    RDS(on) max. () at VGS = 6 V 0.021
    Qg typ. (nC) 12.2
    ID (A) 36.7
    Configuration Dual
    PowerPAK® SO-8 Dual
    Top View
    1
    6.15 mm
    5.15 mm
    Bottom View
    4
    G2
    4
    1
    S12
    G13
    S2
    D 1
    8
    D2
    6
    D1
    7
    D2
    5
    N-Channel MOSFET
    G1
    D1
     
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